the VRF3933 is a gold-metallized silicon n-channel rf power transistor de - signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features ? improved ruggedness v (br)dss = 250v ? 300w with 22db typ. gain @ 30mhz, 100v ? excellent stability & low imd ? common source confguration ? available in matched pairs ? 3:1 load vswr capability at specifed operating conditions ? nitride passivated ? refractory gold metallization ? improved replacement for sd3933 ? thermally enhanced package ? rohs compliant symbol parameter VRF3933 unit v dss drain-source voltage 250 v i d continuous drain current @ t c = 25c 20 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 648 w t stg storage temperature range -65 to 150 c t j operating junction temperature max 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise specifed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 250 260 v v ds(on) on state drain voltage (i d(on) = 10a, v gs = 10v) 2.7 4.0 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 2.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 2.0 a g fs forward transconductance (v ds = 10v, i d = 10a) 8 12 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4969 rev a 6 -2013 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.27 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. VRF3933 VRF3933(mp) 100v, 300w, 150mhz d s s g
VRF3933(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 850 pf c oss output capacitance v ds = 50v 300 c rss reverse transfer capacitance f = 1mhz 30 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, v dd = 100v, i dq = 250ma, p out = 300w 23 26 db d f 1 = 30mhz, v dd = 100v, i dq = 250ma, p out = 300w 50 % f 1 = 30mhz, v dd =100v, i dq = 250ma, p out = 300w 3:1 vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the specifcations and information contained herein. 050-4969 rev a 6 -2013 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 1 10 100 120 1 10 100 800 10 100 1,000 10,000 0 50 100 150 200 250 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (pf) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (a) 5v 5.5v 4.5v 3.5v 6v 17v 7v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) pd max t j = 125c t c = 75c typical performance curves i dmax 4v bvdss line 10v 100 ms 10 ms 1 ms .1 ms
050-4969 rev a 6 -2013 0 0.05 0.10 0.15 0.20 0.25 0.30 10 -5 10 -4 10 -3 10 -2 10 1.0 10 -1 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 44 46 48 50 52 54 56 58 23 24 25 26 27 28 29 17 22 27 32 37 0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 600 17 22 27 32 37 pout (dbrn) p in , (dbm) figure 6. p out and gain vs p in pout (w) p in , (dbm) figure 7. eff and p out vs. p in po w outeff freq=30mhz freq=30mhz figure 5b, transient thermal impedance model table 1 - typical class ab large signal input - output impedance z in - gate shunted with 25 i dq = 250ma z ol - conjugate of optimum load for 300 watts output at v dd =50v freq. (mhz) z in z out 2 21 - j 8.5 14.1 - j 0.6 13.5 4.5 - j 6.5 12.9 - j 4 27.1 2.9 - j 3.1 9.7 - j 6.6 40.7 2.5 - j 2 7.6 - j 7 65 2.4 - j 2.07 4.5 - j 6.6 0.3 d = 0.9 0.7 single pulse 0.5 0.1 0.05 pout gain gain (db) effciency (%) VRF3933(mp) 0.0202 0.0507 0.1199 0.00647f 0.02043f 0.2421f 7.962f t j (c ) 0.0792 t c (c )
VRF3933(mp) 050-4969 rev a 6 -2013 30 mhz t est circui t l1 output c3 c11 c12 c10 c6 c7 c8 c9 c1 1200pf atc100b ceramic c2, c3 0.1uf 50v 1206 smt c9-c11 .047uf npo 150v 1218 smt c6 100 pf metal clad mica c7 arco 462 mica trimmer c8 15 pf atc 100e ceramic c4, c12 10uf 100v electrolytic l1 23 nh - 2t #18 0.2"d .2"l l2 62 nh - 3t #12 0.31"dia l3 2t #16 on 2x 267300081 .5" bead r1-r2 1k 1/4w r3 100 1w t1 9:1 transforner 3t #24 teflon on rf parts co. t1/2 transformer core t2 4:1 transformer 2t 3-ply #16 teflon on rf parts co. t1 transformer core 30 mhz test circuit vbias r1 r2 l2 rf input c2 t1 c1 r3 l3 t2 + 100v c4 + VRF3933
050-4969 rev a 6 -2013 VRF3933(mp) pin 1 - drain pin 2 - gate pin 3 - source pin 4 - source pin 5 - source m177 (0.63 dia. soe) mechanical data all dimensions are .005 dim min typ max a 0.225 0.230 0.235 b 0.265 0.270 0.275 c 0.860 0.865 0.870 d 1.130 1.135 1.140 e 0.545 0.550 0.555 f 0.003 0.005 0.007 g 0.098 0.103 0.108 h 0.150 0.160 0.170 i 0.280 j 1.080 1.100 1.120 k 0.625 0.630 0.635 f e g h i a b c d ok j . 125d nom . 135 r seating plane 1 4 2 3 5 adding mp at the end of p/n specifes a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. hazardous material warning: the ceramic portion of the device below the lead plane is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. beo substrate weight: 0.703g. percentage of total module weight which is beo: 9%.
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